Quantum Noise Spectroscopy of Nanoscale Charge Defects in Silicon Carbide at Room Temperature
Jinpeng Liu, Yuanhong Teng, Yu Chen, Yixuan Wang, Chihang Luo, Jun Yin, Hao Li, Lixing You, Ya Wang, Qi Zhang, Fazhan Shi

TL;DR
This paper demonstrates nanoscale quantum sensing techniques using single PL5 centers in SiC to observe charge defect dynamics and noise spectra at room temperature, advancing semiconductor defect characterization.
Contribution
It introduces room-temperature quantum noise spectroscopy of charge defects in SiC at nanoscale resolution, combining ODMR, dynamical decoupling, and EPR spectroscopy for the first time.
Findings
Real-time observation of single-charge tunneling in SiC
Mapping of spatial noise variations across wafers
Identification of defect origins via nanoscale EPR
Abstract
The nanoscale charge environment critically influences semiconductor physics and device performance. While conventional bulk characterization techniques provide volume-averaged defect properties, they lack the spatial resolution to resolve nanoscale charge heterogeneity and identify microscopic noise sources. Here, we utilize single PL5 centers in 4H-SiC as room-temperature broadband quantum sensors to fill in the gap. We report the first real-time, nanoscale observation of singlecharge tunneling dynamics in a commercial semiconductor at room temperature, by monitoring the random telegraph noise using optically detected magnetic resonance (ODMR). This capability enables an electrical noise imaging technique, showing distinct noise variations across different wafer substrates. By employing dynamical decoupling, we extend noise spectroscopy from near-DC to MHz frequencies, uncovering…
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Taxonomy
TopicsDiamond and Carbon-based Materials Research · Electron Spin Resonance Studies · Quantum and electron transport phenomena
