Defect Engineering for Stabilizing Magnetic and Topological Properties in Mn(Bi1-xSbx)2Te4
Haonan Chen, Jiayu Wang, Huayao Li, Xunkai Duan, Yuxiang Wang, Zixuan Xu, Yingchao Xia, Wenhao He, Zehao Jia, Xiangyu Cao, Yicheng Mou, Xiangyu Jiang, Jiaming Gu, Pengliang Leng, Fengfeng Zhu, Changlin Zheng, Xiang Yuan, Faxian Xiu, Tong Zhou, Lin Miao, Cheng Zhang

TL;DR
This study combines theoretical calculations and improved synthesis techniques to control antisite defects in Mn(Bi1-xSbx)2Te4, enabling stabilization of magnetic and topological states crucial for quantum applications.
Contribution
It introduces a defect engineering approach through optimized synthesis to reduce antisite defects, preserving topological and magnetic properties in Mn(Bi1-xSbx)2Te4.
Findings
Increasing antisite defects destroys the Weyl state.
Optimized synthesis yields crystals with fewer defects.
Strong quantum oscillations and anomalous Hall effect observed.
Abstract
MnBi2Te4 is a versatile platform for exploring diverse topological quantum states, yet its potential is hampered by intrinsic antisite defects. While Sb substitution has been employed to tune the Fermi level towards the charge neutral point, it exacerbates the formation of Mn-Sb antisite defects. Here, we address this challenge by combining first-principles calculations with strategic synthesis to systematically investigate and control antisite defects in Mn(Bi1-xSbx)2Te4. Our calculations reveal that increasing antisite defect density progressively destroys the field-forced magnetic Weyl state, eventually driving the system into a trivial magnetic insulator. Motivated by these findings, we develop an optimized chemical vapor transport method, yielding high-quality Mn(Bi1-xSbx)2Te4 crystals with significantly reduced antisite defect density. The emergence of strong Shubnikov-de Haas…
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Taxonomy
TopicsTopological Materials and Phenomena · 2D Materials and Applications · Chemical and Physical Properties of Materials
