Nonvolatile photoswitching of a Mott state via reversible stacking rearrangement

TL;DR

This paper demonstrates a reversible, nonvolatile optical method to switch a Mott insulator to a metallic state in van der Waals materials by manipulating interlayer stacking, enabling precise control of electronic phases.

Contribution

It introduces a novel optical technique to induce nonvolatile phase transitions in Mott systems through stacking rearrangement, bypassing atomic sliding.

Findings

Observed nonvolatile Mott-to-metallic transition in 1T-TaSe2

Revealed transition caused by interlayer stacking rearrangement

Showed potential for reconfigurable electronic devices

Abstract

Nonvolatile control of the Mott transition is a central goal in correlated-electron physics, offering access to fascinating emergent states and great potential for technological applications. Compared to chemical or mechanical approaches, ultrafast optical excitation further promises a path to create and manipulate novel non-equilibrium phases with ultimate spatiotemporal precision. However, achieving a truly nonvolatile electronic phase transition in laser-excited Mott systems remains an elusive challenge. Here, we present a highly robust and reversible method for optical control of the Mott state in van der Waals systems. Specifically, using angle-resolved photoemission spectroscopy, we observe a nonvolatile Mott-to-metallic transition in the ultrafast laser-excited charge density wave (CDW) material 1T-TaSe2. Complementary theoretical calculations reveal that this transition originates from a rearrangement of the interlayer CDW stacking. This new stacking order, formed following the ultrafast quenching of the CDW, circumvents the need for large-scale atomic sliding. Intriguingly, it introduces a significant in-plane component to the electron hopping and effectively reduces the ratio of on-site Coulomb interaction to bandwidth, thereby suppressing the Mott state and stabilizing a metallic phase. Our results establish optical-control of interlayer stacking as a versatile strategy for inducing nonvolatile phase transitions, opening a new route to tailor correlated electronic phases and realize reconfigurable high-frequency devices.