Co$_2$MnZ (Z = Al, Si, Ga, Ge, Sn) Heusler alloys as candidate materials for spintronic and microelectronic applications: Electronic structure, transport, and magnetism
Vyacheslav V. Marchenkov, Alena A. Semiannikova, Evgenii D. Chernov, Alexey V. Lukoyanov, Valentin Yu. Irkhin, Yulia A. Perevozchikova, Elena B. Marchenkova

TL;DR
This study investigates the electronic, magnetic, and transport properties of Co$_2$MnZ Heusler alloys, revealing their potential for spintronic and microelectronic applications through experimental and theoretical analysis.
Contribution
It provides a comprehensive experimental and theoretical analysis of Co$_2$MnZ alloys, identifying their electronic structures, magnetic properties, and topological features relevant for applications.
Findings
Co$_2$MnSi exhibits half-metallicity with full spin polarization.
Co$_2$MnAl and Co$_2$MnGa are topological semimetals with Weyl points.
Co$_2$MnGe and Co$_2$MnSn are conventional ferromagnets.
Abstract
Magnetic and electronic transport properties of CoMnZ (Z = Al, Ga, Ge, Si, Sn) Heusler alloys were experimentally investigated. Electrical resistivity, in the temperature range from 4.2 to 300 K, as well as field dependences of the Hall effect and magnetization at T = 4.2 K in magnetic fields up to 100 kOe and 70 kOe, respectively, were measured. Experimental data are in good agreement with the results of the theoretical DFT calculations of the electronic structure and magnetic moments. In the band structure of CoMnSi, half-metallicity is formed with the full spin polarization and the half-metallic gap of about 0.6 eV. In CoMnZ (Z = Al, Ge, Sn), it is shifted from the Fermi energy by the hole pockets at the point , preventing thereby the formation of the half-metallic state. In a peculiar case of CoMnGa, the antisite defects are expected to determine structural…
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Taxonomy
TopicsHeusler alloys: electronic and magnetic properties · Chemical and Physical Properties of Materials · Advanced Physical and Chemical Molecular Interactions
