Localization and coherent control of 25 nuclear spins in Silicon Carbide

TL;DR

This paper demonstrates precise 3D localization and characterization of 25 nuclear spins around a single defect in Silicon Carbide, advancing quantum register development for quantum sensing and networking.

Contribution

It introduces angstrom-level localization of nuclear spins and reconstructs their coupling map, enabling enhanced quantum register applications in Silicon Carbide.

Findings

Localized 25 nuclear spins around a V2 center in Silicon Carbide.

Reconstructed coupling map of nuclear spins to the electron spin.

Accessed extended nuclear spin clusters up to four spins.

Abstract

Optically addressable spin defects are excellent candidate platform for quantum sensing and quantum network. Nuclear spins coupled to color centers naturally enable long lived quantum memories and local qubits registers. To fully leverage this potential precise characterization of the surrounding nuclear-spin environment augmented with refined DFT models is required. In this work, we report angstrom-level 3D localization of 25 nuclear spins around a single V2 center in 4H Silicon Carbide. Utilizing specially placed robust nuclear memory as a highly efficient readout ancilla for readout, we apply correlation based spectroscopy and by selecting multi-spin chains up to length four, we access and characterize extended nuclear spin cluster. Using the coupling map we reconstruct their couplings to the central electron spin and neighboring nuclei. This work paves the way towards advanced quantum register applications on Silicon Carbide platform.