High-quality and field resilient microwave resonators on Ge/SiGe quantum well heterostructures
Luigi Ruggiero, Carlo Ciacca, Pauline Drexler, Vera Jo Weibel, Christian Olsen, Christian Sch\"onenberger, Dominique Bougeard, Andrea Hofmann

TL;DR
This paper demonstrates high-quality microwave resonators on Ge/SiGe quantum well heterostructures with significantly improved quality factors, magnetic field resilience, and detailed characterization of their superconducting properties, advancing hybrid quantum device platforms.
Contribution
The authors report the fabrication of microwave resonators with unprecedented quality factors on Ge/SiGe heterostructures, surpassing previous results and analyzing their magnetic field behavior and superconducting properties.
Findings
Achieved internal quality factors >1000, reaching ~49000 at single-photon levels.
Resonators remain well-defined up to 850 mT in-plane magnetic field.
Observed hysteresis in out-of-plane magnetic field indicating vortex- and quasiparticle effects.
Abstract
Superconducting resonators integrated with Ge quantum wells (QWs) offer a promising platform for hybrid quantum devices. Yet, in the most common heterostructure architectures, they have so far been limited by sizable photon losses. Here, we report the fabrication and characterization of microwave resonators patterned in the Al thin film of an in-situ grown superconductor/semiconductor hybrid heterostructure (HS). The semiconductor part of this hybrid HS is grown on a commercial Ge substrate. We consistently achieve internal quality factors , surpassing previous results on Ge QW heterostructures grown using the concept of a virtual Ge substrate on Si substrates. We reach at single-photon occupation and a plateau of at sub-one photon, an order of magnitude larger than any previously reported value of resonators on Ge QW structures at low…
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Taxonomy
TopicsQuantum Information and Cryptography · Quantum and electron transport phenomena · Mechanical and Optical Resonators
