Pyroelectric effects in hybrid semiconductor-lithium niobate quantum devices

TL;DR

This paper investigates the impact of pyroelectric effects in hybrid semiconductor-lithium niobate quantum devices, revealing challenges in device operation and emphasizing the need for mitigation strategies to advance quantum interconnects.

Contribution

It provides the first measurements of pyroelectric effects in integrated semiconductor-lithium niobate quantum devices, highlighting their influence on device performance and operational challenges.

Findings

Pyroelectric effects inhibit quantum dot operation in lithium niobate devices.

Unintentional carrier depletion affects GaAs/AlGaAs devices.

Electrostatic discharge impacts Si/SiGe devices.

Abstract

Hybrid quantum devices using surface acoustic waves show promise as key elements of quantum information processors. We report measurements of integrated flip-chip devices consisting of semiconductor quantum dots and surface acoustic wave resonators in lithium niobate. We observed that the pyroelectric effect in lithium niobate inhibited the operation of quantum dots in the integrated devices. GaAs/AlGaAs devices suffered from unintentional carrier depletion, and Si/SiGe devices suffered from electrostatic discharge. Our results highlight the importance of mitigating pyroelectric effects in semiconductor-lithium niobate hybrid devices for continued progress in quantum interconnects and transducers.