Three-dimensional atom-by-atom mapping of nanoscale precipitates in single Te inclusions in Cd0.9Zn0.1Te crystal
Elo\"ise Rahier, Sebastian Koelling, Guillaume Nadal, Sudarshan Singh, Luc Montpetit, Oussama Moutanabbir

TL;DR
This study employs advanced microscopy techniques to map the 3D atomic distribution in Te inclusions within CZT crystals, revealing nanoscale precipitates, impurity segregation, and phase separation mechanisms crucial for improving crystal growth.
Contribution
It provides the first detailed 3D atomic-level mapping of Te inclusions in CZT, uncovering nanoscale precipitates and impurity distributions that inform growth optimization.
Findings
Nanoscale CZT nanocrystals with 1.5 at.% Zn inside Te inclusions.
A 10 nm shell enriched with Cu and In around precipitates.
Detection of Na and S traces within nanocrystals.
Abstract
The complexity and richness of phenomena governing alloy crystal growth can be unraveled by examining the three-dimensional atomic-level distribution of elements and impurities incorporated during growth. These species act as atomic fingerprints, revealing the thermodynamic constraints that shape material structure and composition. Herein, we combine transmission electron microscopy and atom probe of tellurium (Te) inclusions within cadmium zinc telluride (CZT) single crystals. The correlative analysis uncovers nanoscale precipitates embedded within Te inclusions, consisting of CZT nanocrystals with a Zn content of 1.5 at.%. Surrounding these precipitates, an around 10 nm-thick shell is observed, enriched with copper and indium impurities. In addition, traces of sodium and sulfur are detected within the nanocrystals. These findings provide direct evidence of the complex segregation and…
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Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices
