Ab initio prediction of strain-tunable spin defects in quasi-1D TiS3 and NbS3 nanowires

TL;DR

This study uses ab initio calculations to predict how strain affects the spin and optical properties of vacancy defects in quasi-1D TiS3 and NbS3 nanowires, revealing tunable quantum defect states.

Contribution

It introduces a detailed ab initio analysis of strain-dependent defect geometries and electronic structures in TiS3 and NbS3 nanowires, highlighting their potential for quantum applications.

Findings

Sulfur vacancies and divacancies show strain-dependent geometries.

Defect states are optically bright and tunable with strain.

Strain induces spin state transitions in defects.

Abstract

Defects in atomically thin van der Waals materials have recently been investigated as sources of spin-photon entanglement with sensitivity to strain tuning. Unlike many two-dimensional materials, quasi-one-dimensional materials such as transition metal trichalcogenides exhibit in-plane anisotropy resulting in axis-dependent responses to compressive and tensile strains. Herein, we characterize the tunable spin and optical properties of intrinsic vacancy defects in titanium trisulfide (TiS3) and niobium trisulfide (NbS3) nanowires. Within our ab initio approach, we show that sulfur vacancies and divacancies (VS and VD , respectively) in TiS3 and NbS3 adopt strain-dependent defect geometries between in-plane strains of -3 % and 3 %. The calculated electronic structures indicate that both VS and VD possess in-gap defect states with optically bright electronic transitions whose position relative to the conduction and valence bands varies with in-plane strain. Further, our calculations predict that VS in TiS3 and VD in NbS3 exhibit transitions in their ground state spins; specifically, a compressive strain of 0.4 % along the direction of nanowire growth causes a shift from a triplet state to a singlet state for the VS defect in TiS3, whereas a tensile strain of 2.9 % along the same direction in NbS3 induces a triplet ground state with a zero-phonon line of 0.83 eV in the VD defect. Our work shows that the anisotropic geometry of TiS3 and NbS3 nanowires offers exceptional tunability of optically active spin defects that can be used in quantum applications.