Quenching statistics in Si and Ge SPADs using particle Monte Carlo simulation

TL;DR

This paper uses advanced 3D Monte Carlo simulations to analyze the stochastic behavior of Si and Ge SPADs, revealing a key inverse relationship between avalanche and quenching probabilities crucial for device optimization.

Contribution

It introduces a comprehensive self-consistent 3D Monte Carlo simulation method that captures stochastic carrier transport and quenching dynamics in Si and Ge SPADs.

Findings

Inverse correlation between avalanche and quenching probabilities.

Bias voltage tuning affects SPAD performance.

Simulation captures stochastic features of SPAD operation.

Abstract

Si- and Ge-based single-photon-avalanche-diodes (SPAD) are investigated by using self-consistent 3D Monte Carlo simulation, in a mixed-mode approach including the presence of a passive quenching circuit. This approach of transport allows us to capture all stochastic features of carrier transport and SPAD operation, not only for the avalanche triggering but also for the quenching process. Beyond the comparison of Si and Ge devices, we show in particular the strong inverse correlation between avalanche and quenching probabilities when tuning the bias voltage, which highlights the importance to find a tradeoff between these two probabilities for the optimization of SPAD operation.