Engineering a Correlated Narrow-Gap Semiconductor: Effects of Ga Substitution in EuZn$_2$P$_2$
M. Dutra, E. Marulanda, G. G. Vasques, J. F. Oliveira, P. C. Sabino, R. B. Delgado, L. Mendon\c{c}a-Fereira, A. R. V. Benvenho, E. Baggio-Saitovitch, R. K. Machado, N. M. Kawahala, J. Munevar, M. A. Avila, F. G. G. Hernandez

TL;DR
Ga substitution in EuZn₂P₂ effectively narrows its semiconducting gap, enhances carrier density, and modifies magnetic and electronic properties, making it a promising platform for correlated narrow-gap magnetic semiconductors.
Contribution
This study demonstrates how Ga substitution tunes the electronic and magnetic properties of EuZn₂P₂, creating a new platform for engineering correlated narrow-gap magnetic semiconductors.
Findings
Reduced electrical resistivity with Ga substitution.
Persistence of Eu²⁺ moments and increased carrier density.
Pronounced negative magnetoresistance and enhanced Drude conductivity.
Abstract
The effect of Ga substitution on the electronic, magnetic, and low-energy responses of the Zintl phase EuZnP is investigated by electrical transport, electron spin resonance (ESR), and terahertz time-domain spectroscopy (THz-TDS). Incorporating Ga into EuZnP (EuZnGaP) reduces the electrical resistivity, indicating enhanced free-carrier density and a narrowed semiconducting gap. ESR confirms the persistence of Eu moments while showing a crossover from a Lorentzian to a Dysonian lineshape, consistent with reduced skin depth, increased carrier density, and the emergence of diffusive contributions. Ga-substituted compound display pronounced negative magnetoresistance linked to magnetic-polaron formation. THz-TDS reveals strong low-frequency absorption and a notable enhancement of the Drude conductivity in the substituted material, together with an…
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Taxonomy
TopicsZnO doping and properties · Heusler alloys: electronic and magnetic properties · Rare-earth and actinide compounds
