Tuning Carrier Type and Density in Highly Conductive and Infrared-Transparent (Bi1-xSbx)2Te3 films
Xiangren Zeng, Shenjin Zhang, Zhiheng Li, Weiyue Ma, Renjie Xie, Yanwei Cao, Fengguang Liu, Fengfeng Zhang, Haichao Zhao, Xiong Yao

TL;DR
This paper demonstrates a band engineering approach to optimize carrier type and density in (Bi1-xSbx)2Te3 films, achieving high infrared transmittance and electrical conductance, advancing infrared transparent conductor technology.
Contribution
It introduces a novel band engineering strategy to simultaneously tune conductance and transmittance in topological insulator films, overcoming previous trade-offs.
Findings
Achieved ~1000 S/cm electrical conductance in Sb2Te3.
Attained 92.3% infrared transmittance in 8-13 um range.
Identified concurrent enhancement of mobility and dielectric constant as key.
Abstract
Infrared transparent conductors have long been sought due to their broad optoelectronic applications in the infrared wavelength range. However, the search for ideal materials has been limited by the inherent trade-off between electrical conductance and optical transmittance. Band engineering offers an effective approach to modulate carrier type and density, enabling concurrent tuning of both conductance and transmittance. In this work, we present a band engineering strategy that enables effective tuning of both infrared transmittance and electrical conductance in topological insulator (Bi1-xSbx)2Te3, bridging the gap and paving the way for applying topological insulators to infrared photoelectric devices. More importantly, with the combination of high carrier mobility and a large optical dielectric constant as suggested by previous report, Sb2Te3 achieves a high electrical conductance…
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Taxonomy
TopicsTopological Materials and Phenomena · Chemical and Physical Properties of Materials · Advanced Thermoelectric Materials and Devices
