Magnetoconductance evolution across the topological-trivial phase transition in ${In_{x}}({Bi_{0.3}}{Sb_{0.7}})_{2-x}{Te_3}$ thin films
Sambhu G Nath, Subhadip Manna, Kanav Sharma, Amar Verma, Ritam Banerjee, R K Gopal, Chiranjib Mitra

TL;DR
This study explores how electronic transport in ${In_{x}}({Bi_{0.3}}{Sb_{0.7}})_{2-x}{Te_3}$ thin films evolves across a topological phase transition, revealing a transition from weak antilocalization to variable-range hopping with positive magnetoconductance.
Contribution
It provides a comprehensive experimental analysis linking topological phase transition, spin-orbit coupling, and disorder to magnetotransport behavior, incorporating incoherent hopping mechanisms.
Findings
Topological transition occurs near x ≈ 7% with reduced spin-orbit coupling.
Transport shifts from diffusive to localized, with positive magnetoconductance at higher x.
Magnetoconductance behavior is explained by incoherent hopping and wavefunction effects.
Abstract
We investigate the evolution of electronic transport across the topological-trivial phase transition in thin films by systematically tuning the indium concentration . Increasing reduces the effective spin-orbit coupling, driving a topological quantum phase transition near , and at higher disorder a crossover from diffusive to strongly localized transport around . In the diffusive regime, the magnetoconductance is well described by the Hikami-Larkin-Nagaoka formalism, with the evolution of the WAL prefactor correlating with the band-inversion transition. Beyond the diffusive limit, transport crosses into variable-range hopping, accompanied by a striking reversal of magnetoconductance from negative to positive. The observed positive low-field magnetoconductance, its pronounced…
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Taxonomy
TopicsTopological Materials and Phenomena · Quantum and electron transport phenomena · Advanced Thermoelectric Materials and Devices
