Chiral orbital current driven topological Hall effect in Mn3Si2Te6
Arnab Das, Soumik Mukhopadhyay

TL;DR
This paper reveals that in Mn3Si2Te6, the topological Hall effect originates from chiral orbital currents rather than spin textures, highlighting the role of orbital textures in topological transport in 2D magnets.
Contribution
It demonstrates that orbital textures can produce a topological Hall effect and colossal magnetoresistance, offering a new mechanism for dissipationless transport in layered magnetic materials.
Findings
THE signal increases in nanoflakes compared to bulk
THE disappears with increasing current
Strong correlation between CMR and THE
Abstract
Chiral orbital current (COC) plays a crucial role in governing the magnetization and transport behaviour in the layered ferrimagnetic nodal-line semiconductor Mn3Si2Te6. Here, we observe that the topological Hall effect (THE), typically attributed to Berry curvature from chiral spin textures, originates from COC, which produces an emergent magnetic field for conduction electrons due to its real-space orbital textures. We find that the THE signal strengthens as we move down from bulk to nanoflakes, but tends to disappear with increasing current, along with the disappearance of the COC state. We also demonstrate a strong correlation between the colossal magnetoresistance (CMR) and the observed THE, suggesting that large Berry curvature and topological transport can arise purely from orbital degrees of freedom, providing a new platform for engineering dissipationless transport in 2D…
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Taxonomy
TopicsTopological Materials and Phenomena · Chemical and Physical Properties of Materials · 2D Materials and Applications
