Developing a valence force field model for wurtzite semiconductors by exploiting similarities with [111]-oriented zinc blende systems: The case of wurtzite boron nitride, III-N materials and (B,In,Ga)N alloys
Aisling Power, Cara-Lena Nies, Stefan Schulz

TL;DR
This paper develops a valence force field model for wurtzite semiconductors by leveraging similarities with zinc blende structures, enabling accurate large-scale simulations of their properties without additional parameters.
Contribution
The authors create a parameter-free, analytical VFF model for wurtzite semiconductors based on zinc blende analogies, improving accuracy over previous empirical approaches.
Findings
Accurately reproduces elastic and structural properties of wurtzite materials.
Predicts band gaps and internal parameters consistent with DFT calculations.
Validates well on highly mismatched alloys such as (B,Ga)N and (B,In,Ga)N.
Abstract
Controlling the crystal phase and lattice mismatch of semiconductors offers a powerful route to engineer electronic and optical properties of heterostructures. As a consequence, semiconductors in the wurtzite phase are increasingly sought after, superseding the thermodynamically favored cubic zinc blende phase. Empirical atomistic modeling, required for large scale simulations of heterostructures and their properties, relies heavily on valence force field (VFF) methods to find the equilibrium atomic positions in an alloy. For zinc blende crystals, VFF models are well-established. In the case of wurtzite, such parameters are frequently adopted without rigorous analysis, despite subtle but consequential differences from the zinc blende structure. Such an approach can compromise accuracy in describing material properties, since the structural differences between zinc blende and wurtzite…
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Taxonomy
TopicsMachine Learning in Materials Science · GaN-based semiconductor devices and materials · Boron and Carbon Nanomaterials Research
