Defect-Engineered Multifunctionality in Cu-Doped Bi2Te2: Interplay of Thermoelectric, Piezoelectric, and Optoelectronic Properties from First-Principles Insights
Muhammad Usman Javed, Sikander Azam, Qaiser Rafiq, Hamdy Khamees Thabet

TL;DR
This study uses first-principles calculations to show that Cu doping in Bi2Te3 enhances its thermoelectric, piezoelectric, and optical properties, creating a multifunctional material for energy and optoelectronic applications.
Contribution
The paper provides detailed insights into how Cu defect engineering modifies the structural, electronic, and multifunctional properties of Bi2Te3 from first-principles calculations.
Findings
Seebeck coefficient increases from 180 to 220 μV/K at 300 K with Cu doping
Piezoelectric coefficient e33 doubles at 5% Cu doping
Large static dielectric constants (>600) indicate tunable optical properties
Abstract
Defect engineering can improve the linked charge, spin, and lattice behavior of thermoelectric topological insulators. Using density functional theory with spin orbit coupling, we study structural, electronic, optical, thermoelectric, piezoelectric, and charge density features of pristine and Cu doped Bi2Te3. Cu substitution slightly expands the lattice and lowers the total energy minimum, which stabilizes the structure. The density of states shows that Cu d and Te p hybridization creates sharp states near the Fermi level, raising the carrier concentration and supporting higher Seebeck coefficient and power factor. Transport calculations show an increase in the Seebeck coefficient from about 180 microvolts per kelvin in pristine Bi2Te3 to about 220 microvolts per kelvin at 300 K while keeping the electrical conductivity nearly unchanged. Optical spectra reveal strong low energy…
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Taxonomy
TopicsTopological Materials and Phenomena · Advanced Thermoelectric Materials and Devices · Surface and Thin Film Phenomena
