Optical properties of InGaN quantum wells: accurately modeling the effects of disorder

TL;DR

This paper presents a model incorporating alloy disorder to accurately explain the optical properties of InGaN quantum wells, aligning well with experimental data and clarifying disorder's role in their optical behavior.

Contribution

It introduces a disorder-inclusive model that explains key optical features of InGaN quantum wells, advancing understanding of their emission properties.

Findings

Disorder significantly influences luminescence lineshape.

The model accurately predicts Stokes shift and radiative rates.

Disorder explains the unique properties of long-wavelength InGaN emitters.

Abstract

A model including random alloy disorder is used to account for the outstanding optical properties of InGaN quantum wells (QW). The model provides excellent agreement to experimental observations on various structures. This study clarifies the prevalent role played by disorder in optical features such as the luminescence lineshape, the Stokes shift, and the radiative rate. Finally, the relationship between disorder and the peculiar properties of long-wavelength InGaN emitters is investigated.