Resistance Switching Properties of Stoichiometric and Nitrogen Implanted Silicon Nitride Nanolayers on N and P-Type Si Substrates

TL;DR

This study investigates how nitrogen doping affects the resistive switching behavior of silicon nitride-based ReRAM devices on n- and p-type silicon, highlighting differences in electrical properties and conductive mechanisms.

Contribution

It provides a comparative analysis of nitrogen implantation effects on resistive switching in silicon nitride nanolayers on different silicon substrates.

Findings

Nitrogen implantation alters trap density and switching voltages.

Electrical properties differ between n- and p-type silicon substrates.

Impedance spectroscopy reveals distinct conductive pathways.

Abstract

This paper examines the resistive switching characteristics of LPCVD SiNx MNOS ReRAM cells on both heavily doped n- and p-type silicon substrates, focusing on the effects of nitrogen doping. Detailed comparisons of electrical properties through nitrogen implantation reveal variations in trap density and SET-RESET voltages between n and p conductivity Si substrates. Impedance spectroscopy further elucidates the conductive path formation and its resistance.