Breakdown characteristics of SiNx with different stoichiometries for resistive memories
A.E. Mavropoulis, I. Kanellopoulos, G. Pissanos, G. Samara, N. Vasileiadis, E. Stavroulakis, P. Normand, G. Ch. Sirakoulis, P. Dimitrakis
TL;DR
This paper investigates how varying the stoichiometry of SiNx layers affects their breakdown characteristics, aiming to optimize their use in resistive random-access memory (RRAM) devices.
Contribution
It introduces a method to modify SiNx stoichiometry via LPCVD gas flow rates and evaluates their breakdown properties for RRAM applications.
Findings
Different stoichiometries exhibit distinct breakdown behaviors.
Optimized SiNx stoichiometry improves RRAM device reliability.
LPCVD process effectively controls SiNx properties for memory applications.
Abstract
The breakdown characteristics of SiNx layers with different stoichiometries are explored. The stoichiometry of SiNx is modified by changing the gas flow rates during the LPCVD deposition. These layers are suitable for RRAM cells.
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Taxonomy
TopicsSemiconductor materials and devices · Advanced Memory and Neural Computing · Advancements in Semiconductor Devices and Circuit Design