Scalable van der Waals Photonics: High-Refractive-Index Gallium Sulfide Films with Single-Crystal Optical Properties
Aleksandr Slavich, Georgy Ermolaev, Dmitriy Grudinin, Mikhail Tatmyshevskiy, Alexander Syuy, Nikolay Pak, Dmitry Yakubovsky, Mikhail Mironov, Adilet Toksumakov, Alexander Melentev, Elena Zhukova, Anton Minnekhanov, Gleb Tselikov, Ivan Kruglov, Sergey M. Novikov, Andrey Vyshnevyy

TL;DR
This paper demonstrates that atomic layer deposition can produce large-area gallium sulfide films with optical properties matching single crystals, enabling scalable, high-performance vdW photonics for integrated optical devices.
Contribution
The study introduces ALD-grown gallium sulfide as a scalable vdW dielectric with single-crystal optical properties, overcoming previous size and thickness limitations.
Findings
ALD-GaS has optical constants similar to single crystals.
ALD-GaS enables better crosstalk suppression in waveguides.
Scalable ALD-GaS is viable for visible-spectrum photonics.
Abstract
The integration of high-refractive-index dielectrics into scalable photonic architectures is foundational to advancing integrated circuits and augmented reality (AR) displays. Van der Waals (vdW) materials offer exceptional optical properties, including high refractive indices and giant anisotropy, but their implementation is constrained by the small area and uncontrolled thickness of mechanically exfoliated flakes. Here, we demonstrate that atomic layer deposition (ALD) grown gallium sulfide (GaS) overcomes the trade-off between high optical performance and manufacturability, emerging as a large-scale vdW dielectric platform. Through rigorous optical and structural benchmarking against pristine single crystals, we establish that the optical constants (n, k) of ALD-GaS are virtually indistinguishable from single-crystal counterparts. By leveraging the retained out-of-plane anisotropy,…
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Taxonomy
Topics2D Materials and Applications · GaN-based semiconductor devices and materials · Thin-Film Transistor Technologies
