MBE obtained n-CdO:Eu p-Si heterojunctions -- electron beam induced profiling, electrical and structural properties

TL;DR

This paper reports on the fabrication and detailed characterization of Eu-doped CdO/p-Si heterojunctions created via plasma-assisted molecular beam epitaxy, highlighting their structural, optical, and electrical properties.

Contribution

It introduces in situ Eu doping of CdO layers on p-Si using PA MBE and provides comprehensive analysis of their structural, optical, and electrical characteristics.

Findings

Polycrystalline Eu-doped CdO films confirmed by XRD and FTIR.

Heterojunctions exhibit rectifying behavior with a ratio of 20.

EBIC measurements reveal minority carrier diffusion length and interface properties.

Abstract

The present investigation reports on the fabrication and characterization of heterojunctions based on in situ Eu doped CdO layers, which were deposited on p-type silicon using the plasma assisted molecular beam epitaxy (PA MBE) method. The structural and optical properties of the cadmium oxide (CdO) films were investigated using X ray diffraction and Fourier transform infrared spectroscopy (FTIR). The CdO Eu films are polycrystalline. The electrical properties of the p n heterojunction composed of transparent n CdO Eu and p Si semiconductors were investigated by current voltage and electron beam-induced current (EBIC) measurements. Current voltage measurements demonstrate good junction characteristics with a rectifying ratio of 20 . EBIC measurements allowed us to calculate the diffusion length of minority carriers and the precise location of the depleted area at the CdO and Si interfaces.