An extended low-frequency noise compact model for single-layer graphene FETs including correlated mobility fluctuations effect

TL;DR

This paper develops an extended low-frequency noise model for single-layer graphene FETs that incorporates correlated mobility fluctuations, validated with experimental data across various device configurations and bias conditions.

Contribution

It introduces a physics-based LFN model for GFETs that includes correlated mobility fluctuations and adapts parameter extraction methods from silicon technology.

Findings

Model accurately predicts LFN in GFETs across different biases.

Inclusion of mobility fluctuations improves noise prediction accuracy.

Validated with experimental data from multiple GFET devices.

Abstract

Correlated mobility fluctuations are considered in the physics-based carrier number fluctuation deltaN low-frequency noise (LFN) compact model of single-layer graphene field effect transistors (GFET) in the present study. Trapped charge density and Coulomb scattering coefficient deltaN LFN parameters are obtained after applying a parameter extraction methodology, adapted from conventional silicon technologies, to the linear ambipolar regions of GFETs. Appropriate adjustments are considered in the method according to GFETs physical characteristics. Afterwards, Hooge mobility as well as series resistance fluctuations LFN parameters can be extracted. The updated LFN model is validated with experimental data from various long and short-channel GFETs at an extended range of gate and drain bias conditions.