Chirality-induced magnetoresistance in hybrid organic-inorganic perovskite semiconductors
Md Azimul Haque, Pius Markus Theiler, Ian A. Leahy, Steven P. Harvey, Jeiwan Tan, Matthew P Hautzinger, Margherita Taddei, Aeron McConnell, Andrew Greider, Andrew H. Comstock, Yifan Dong, Kirstin Alberi, Yuan Ping, Peter C. Sercel, Joseph M. Luther, Dali Sun, Matthew C. Beard

TL;DR
This study demonstrates room-temperature chirality-induced spin selectivity in hybrid organic-inorganic perovskite semiconductors, achieving over 100% magnetoresistance in spin valves, revealing a strong link between structure and spintronic properties.
Contribution
It reports the first large CISS-induced magnetoresistance in hybrid perovskites at room temperature, highlighting the role of interfacial spin-selective tunneling and structure-property relationships.
Findings
CISS-MR exceeds 100% in hybrid perovskite spin valves
CISS-MR depends strongly on the material's chirality
Large tunneling MR response is distinct from anisotropic MR
Abstract
The combination of semiconducting properties and synthetically tunable chirality in chiral metal halide semiconductors (CMHS) offer a compelling platform for room temperature control over electronic spin properties, leveraging effects such as chirality-induced spin selectivity (CISS) for the development of new opto-spintronic functionalities. We report room-temperature CISS-induced magnetoresistance (CISS-MR) exceeding 100% for spin valves in a configuration consisting of a ferromagnet (FM), tunneling barrier, and CMHS. The high CISS-MR is attributed to interfacial spin-selective tunneling barrier induced by the chirality, which can produce current dissymmetry factors that surpass the limit imposed by the Julli\`ere model governed by the intrinsic spin polarization of the adjacent FM contact. The CISS-MR exhibits a strong dependence on the CMHS composition, revealing a…
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Taxonomy
TopicsPerovskite Materials and Applications · Magnetism in coordination complexes · Organic Light-Emitting Diodes Research
