Dynamic Screening Effects on Auger Recombination in Metal-Halide Perovskites

TL;DR

This paper introduces a dynamic screening framework for modeling Auger recombination in metal-halide perovskites, revealing that frequency-dependent dielectric effects significantly reduce Auger losses and alter recombination dynamics.

Contribution

It develops a general GW-based method to incorporate dynamic dielectric screening into Auger recombination calculations, improving predictive accuracy for polar semiconductors.

Findings

Dynamic screening reduces Auger coefficients by 50-60%.

Shifts the recombination crossover point by nearly a factor of two.

Provides a transferable framework for various polar semiconductors.

Abstract

The performance of modern light-emitting technologies, from lasers to LEDs, is limited by nonradiative losses, with Auger recombination being the dominant channel at device-relevant carrier densities. Reliable modeling of this process is essential, yet conventional treatments neglect dynamic dielectric effects, limiting the predictive reliability at operating conditions. We develop a general framework that incorporates the frequency-dependent screened Coulomb interaction $W_{00}(\mathbf{q},\omega)$, computed from low-scaling \textit{GW}, into both direct and phonon-assisted Auger amplitudes. Demonstrated on orthorhombic $\gamma$-CsPbI$_3$ (band gap $E_g\approx1.73$ eV) and $\gamma$-CsSnI$_3$ ($E_g\approx1.30$ eV), the approach shows that dynamic screening enhances the dielectric response, lowering the room-temperature Auger coefficient by $\sim$50-60 %. This renormalization shifts the crossover between radiative and nonradiative recombination by nearly a factor of two in carrier density. Dynamic dielectric screening thus emerges as a quantitative determinant of Auger recombination, offering a transferable framework for predictive modeling across polar semiconductors where frequency-independent screening models are inadequate.