Remote epitaxial frustration
Taehwan Jung, Nicholas Hagopian, Anshu Sirohi, Quinn Campbell, Chengye Dong, Zachary T. LaDuca, Tamalika Samanta, Joshua Robinson, Paul M. Voyles, and Jason K. Kawasaki

TL;DR
This paper provides experimental and theoretical evidence for remote epitaxial frustration, revealing how competing interactions at the interface influence epitaxial growth and order in heterostructures.
Contribution
It introduces the concept of remote epitaxial frustration, supported by experimental signatures and density functional theory, advancing understanding of epitaxial mechanisms beyond traditional explanations.
Findings
Identification of a disordered interlayer at the interface
Observation of a 30-degree rotated epitaxial relationship
Theoretical explanation via remote epitaxial frustration mechanisms
Abstract
Remote epitaxy relaxes the constraints of conventional epitaxy, to enable low defect density, chemically abrupt heterostructures and exfoliation of single crystalline membranes. However, definitive evidence for a true remote mechanism remains elusive because most experiments can be explained by alternative mechanism that are macroscopically indistinguishable from true remote epitaxy. Using GdAuGe films grown on graphene/SiC (0001), we present two signatures that cannot be explained by the leading alternatives to the remote mechanism: (1) a few atomic layer thick disordered interlayer at the GdAuGe/graphene interface and (2) a rotated epitaxial relationship between the GdAuGe film and the SiC substrate. Density functional theory calculations indicate these signatures arise from remote epitaxial \textit{frustration}, a competition amongst epitaxy to the remotely screened…
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Taxonomy
TopicsGraphene research and applications · 2D Materials and Applications · Advanced Physical and Chemical Molecular Interactions
