Full Electrical Switching of a Freestanding Ferrimagnetic Metal for Energy-Efficient Bipolar Neuromorphic Computing
Li Liu, Peixin Qin, Xiang Wang, Xiaobo She, Shaoxuan Zhang, Xiaoning Wang, Hongyu Chen, Guojian Zhao, Zhiyuan Duan, Ziang Meng, Qinghua Zhang, Qiong Wu, Yu Liu, Zhiqi Liu

TL;DR
This paper introduces a water-soluble sacrificial layer enabling rapid release of freestanding ferrimagnetic membranes with deterministic switching, leading to scalable, high-performance neuromorphic devices with reduced complexity and high accuracy.
Contribution
It presents a universal water-soluble sacrificial layer for fabricating freestanding ferrimagnetic membranes, enabling ultrafast switching and intrinsic bipolar resistive behavior for neuromorphic applications.
Findings
Achieved 92% accuracy on CIFAR-10 with neuromorphic devices
Reduced device count by half compared to differential schemes
Demonstrated ultrafast, deterministic spin-orbit torque switching
Abstract
Flexible electronics and neuromorphic computing face key challenges in material integration and function retention. In particular, freestanding membranes suffer from slow sacrificial layer removal and interfacial strain, while neuromorphic hardware often relies on area-intensive dual-device schemes for bipolar synaptic weights. Here, we present a universal strategy based on water-soluble Sr4Al2O7 sacrificial layers, enabling the rapid release of freestanding ferrimagnetic metal membranes, which exhibit deterministic spin-orbit torque switching characteristics with well-preserved perpendicular magnetic anisotropy and are potential for next-generation ultrafast information technology. Extending this approach, we realize single-device ferrimagnetic synapses exhibiting intrinsic bipolar resistive switching. When implemented in a ResNet-18 architecture, these devices achieve 92% accuracy on…
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Taxonomy
TopicsMagnetic properties of thin films · Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices
