Rewritable Complementary Nanoelectronics Enabled by Electron-Beam Programmable Ambipolar Doping

TL;DR

This paper introduces a rewritable, electron-beam programmable doping technique in WSe2 transistors, enabling reversible, precise ambipolar doping control for reconfigurable nanoelectronics with high performance.

Contribution

It presents a novel, mask-free method for reversible ambipolar doping in 2D semiconductors, allowing dynamic reconfiguration of electronic device functionalities.

Findings

Reversible doping exceeding 10^13 cm^-2 achieved.

High-performance CMOS inverters demonstrated.

Device polarity can be rewritten for different logic functions.

Abstract

The ability to reversibly and site-selectively tune ambipolar doping in a single semiconductor is crucial for reconfigurable electronics beyond silicon, but remains highly challenging. Here, we present a rewritable architecture based on electron-beam programmable field-effect transistors (FETs). Using WSe$_2$ as a model system, we demonstrate electron-beam-induced doping that enables reversible, precisely controlled carrier modulation exceeding $10^{13}$ cm$^{-2}$. The in-situ writing, erasing, and rewriting of ambipolar doping of nanoscale patterns was directly visualized by scanning microwave impedance microscopy. This mask-free, lithography-compatible approach can achieve precise band engineering within individual channels, yielding near-ideal subthreshold swings (~ 60 mV/dec) and finely tunable threshold voltages for both carrier types without specialized contact engineering. These capabilities allow on-demand realization of high performance logic, including CMOS inverters with high voltage gains and low power consumption, as well as NAND-to-NOR transitions on the same device via direct polarity rewriting. Our platform offers a scalable and versatile route for rapid prototyping of complementary electronics.