Mode-resolved logarithmic quasiballistic heat transport in thin silicon layers: Semianalytic and Boltzmann transport analysis
Jae Sik Jin

TL;DR
This paper develops a mode-resolved framework to understand the logarithmic quasiballistic heat transport in thin silicon layers, revealing how specific phonon modes contribute to the observed thermal response at nanoscale hotspots.
Contribution
It introduces a semianalytical, mode-resolved spectral phonon model validated against Boltzmann transport, elucidating the origin of logarithmic scaling in quasiballistic heat transfer.
Findings
Logarithmic scaling arises from modes on a conductivity plateau that are diffusive or quasiballistic.
Fully ballistic modes contribute a nonlogarithmic background, slowing heat suppression.
Spectral rules for mode-specific quasiballistic transport are established.
Abstract
Nonequilibrium phonon transport driven by nanoscale hotspot heating in silicon device layers governs heat dissipation in advanced microelectronics and underscores the need for a better microscopic understanding of such processes. Yet the origin of the frequently observed logarithmic (ln) dependence of the apparent thermal response on hotspot size in crystalline silicon, and the role of individual phonon modes in this regime, remain unclear. Here, we develop a semianalytical, mode-resolved framework in the spectral phonon mean free path (MFP) domain and validate it against a full-phonon-dispersion Boltzmann transport model for heat removal from a 10 x 10 nm^2 hotspot in a thin Si layer (thicknesses of 41, 78, and 177 nm) representative of a silicon-on-insulator transistor. We show that ln-type quasiballistic scaling arises only for modes that lie on a log-uniform conductivity plateau and…
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Taxonomy
TopicsThermal properties of materials · Advanced Thermoelectric Materials and Devices · Advancements in Semiconductor Devices and Circuit Design
