Photoelectrical detection and characterization of divacancy and PL5-PL7 spins in silicon carbide

TL;DR

This paper demonstrates room-temperature photoelectrical detection of specific spin defects in silicon carbide, revealing new resonance features and characterizing their properties for quantum device applications.

Contribution

It introduces a scalable PDMR technique for NIR spin defects in silicon carbide, including discovery of a secondary resonance and detailed defect characterization.

Findings

PL7 and PL5 exhibit stronger PDMR signals than PL6.

A previously unknown secondary resonance of PL7 was discovered.

Zero-field splitting parameters for PL7 were determined.

Abstract

Photoelectrical detection of magnetic resonance (PDMR) offers a scalable alternative to optical readout of spin defects in semiconductors and is particularly promising for near-infrared (NIR) emitters, where photodetection is often challenging. Here, we demonstrate room-temperature coherent PDMR of PL3 (divacancy), PL5, PL6, and PL7 spins. PL7 and PL5 exhibit notably stronger PDMR than PL6 as opposed to optical detection, indicating higher ionization efficiency and suitability for electrical readout. Rabi oscillation and two-frequency spectroscopy reveal a previously undiscovered secondary resonance of PL7. We determine the zero-field splitting parameters of PL7 and assign the recently reported PL3a defect to PL7. The demonstrated PDMR of these NIR defects constitutes a key advancement toward quantum electronic devices. Also, the clarified spin parameters and ionization characteristics provide a solid foundation for advancing quantum technologies utilizing these defects regardless of the detection schemes.