High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer

TL;DR

This paper demonstrates high-fidelity single qubit control in silicon MOS quantum dots fabricated with industrial wafer processes, achieving over 99.5% fidelity through optimized Rabi frequency and noise mitigation techniques.

Contribution

It introduces a method for high-fidelity qubit control in Si-MOS quantum dots using a 300 mm wafer process with improved Rabi frequency and noise tracking, advancing scalable quantum computing.

Findings

Achieved a Rabi frequency of 5 MHz with high Q-factors.

Demonstrated a single gate fidelity of 99.5%.

Improved qubit coherence by tracking qubit frequency.

Abstract

We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the $T^{Rabi}$ from 7 to 11 $\mu$s at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 $\pm$ 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.