Hole to Electron Crossover in a (Cd,Mn)Te Quantum Well through Surface Metallization
Amadeusz Dydnia\'nski, Mateusz Raczy\'nski, Aleksandra {\L}opion, Tomasz Kazimierczuk, Jacek Kasprzak, Karolina Ewa Po{\l}czy\'nska, Wojciech Pacuski, Piotr Kossacki

TL;DR
This study investigates how different surface metals affect the charge type in a CdTe quantum well, revealing that gold and nickel can switch the local doping from p-type to n-type due to their bonding properties.
Contribution
It demonstrates the influence of specific contact metals on the local charge properties of a CdTe quantum well, highlighting surface metallization as a method to control doping.
Findings
Gold and nickel flip the doping from p-type to n-type.
Most metals preserve the original p-type doping.
Surface metallization can enhance electron diffusion into the quantum well.
Abstract
In this work we look into how the contact material influences the local charge properties of a p-type CdTe-based quantum well. We study five metals deposited as 10 nm layers on the sample surface: Au, Ag, Cr, Ni and Ti. We use magneto-spectroscopy to discriminate their charge states through monitoring the Zeeman shifts at singlet-triplet transitions. Most tested metals retain the original p-type of the QW, while gold and nickel coverage flips the local doping to n-type. This is attributed to a robust bonding of these two metals to the semiconductor, efficiently passivating its surface and thus improving electron diffusion from the metal to the quantum well.
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties
