High-order two-component fractional quantum Hall states around filling factor $\nu = 1$

TL;DR

This study uncovers high-order two-component fractional quantum Hall states in GaAs bilayers driven by in-plane magnetic fields, revealing unexpected robustness and expanding the understanding of quantum Hall phenomena.

Contribution

It reports the experimental realization of high-order 2C-FQH states near $ u=1$, demonstrating their proliferation and robustness, which was previously unobserved.

Findings

High-order 2C-FQH states emerge near $ u=1$

Unbalanced states can be more robust than balanced ones

Symmetry and topology play key roles in these states

Abstract

Two-component fractional quantum Hall (2C-FQH) states in electron bilayers have been known for decades, yet their experimental realization remained limited to low-order fractions. Here we report on several families of high-order 2C-FQH states that emerge when an in-plane magnetic field drives a controlled monolayer-to-bilayer transition in an ultra-high-mobility GaAs quantum well. These families of states proliferate symmetrically toward the filling factor $\nu = 1$, from both $\nu = 2/3$ and $\nu = 4/3$, thereby respecting particle-hole symmetry. Surprisingly, many unbalanced states (with unequal layer fillings) are more robust than their parent balanced states, defying the expected hierarchy of Jain sequences. Our findings substantially expand the known landscape of 2C-FQH states, highlighting the unexpected richness of the bilayer quantum Hall regime and opening new routes for probing the interplay of symmetry, topology, and interactions in quantum Hall systems.