Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension

TL;DR

This paper demonstrates high-voltage -Ga2O3 trench junction barrier Schottky diodes with space-modulated junction termination, achieving over 1.8 kV breakdown voltage and low leakage, showing promise for high-power applications.

Contribution

It introduces a novel trench JBS diode design with space-modulated junction termination extension, improving high-voltage performance and low leakage in -Ga2O3 diodes.

Findings

Breakdown voltage exceeds 1.8 kV with low leakage currents.

Achieves low turn-on voltage (~1V) similar to planar diodes.

Device with 0.85m fin width shows a FOM of ~0.7 GW/cm^2.

Abstract

In this work, we report on the design and fabrication of p-NiO/Ga2O3 trench junction barrier schottky diodes (JBSD) integrated with space-modulated junction termination extension (SM-JTE) and compare the performance with planar Ni/Ga2O3 schottky diodes (SBDs) and p-NiO/Ga2O3 heterojunction diodes (HJDs). The JBSDs achieved breakdown voltages exceeding 1.8 kV along with low leakage currents (<10-2 A/cm2), while displaying low turn on voltage (VON) of ~1V, which is similar to that of planar Ni/Ga2O3 SBDs. The fabricated devices showed excellent forward characteristics with low differential on-resistance (Ron,sp) ranging from 4-10.5 m{\Omega}-cm2, for fin width between 0.6- 1.25 microns. Best performing device with fin width of 0.85{\mu}m showed a unipolar figure of merit (FOM) of ~0.7GW/cm2. This work showcases the benefits of trench JBS design along with SM-JTE edge-termination for efficient high-performance kilovolt-class \b{eta}- Ga2O3 diodes.