Computer Simulation of the Growth of a Metal-Organic Framework Proto-crystal at Constant Chemical Potential
Sahar Andarzi Gargari (1), Emilio M\'endez (1), Rocio Semino (1) ((1) Sorbonne Universit\'e, CNRS, Physico-chimie des Electrolytes et Nanosyst\`emes Interfaciaux, PHENIX, Paris, France)

TL;DR
This study uses computer simulations to explore the molecular mechanisms of MOF growth, revealing non-classical growth pathways, defect formation, and the influence of temperature and concentration on growth dynamics.
Contribution
It introduces a novel simulation approach combining constant chemical potential and particle insertion to model MOF growth at the molecular level.
Findings
Non-classical growth mechanisms involve oligomer attachments.
Defective sites with rings of 3, 5, and 7 members are formed during growth.
Growth rate depends non-linearly on concentration, suggesting adsorption-controlled process.
Abstract
Designing metal-organic frameworks (MOFs) synthesis protocols is currently largely driven by trial-and-error, since we lack fundamental understanding of the molecular level mechanisms that underlie their self-assembly processes. Previous works have studied the nucleation of MOFs, but their growth has never been studied by means of computer simulations, which provide molecular level detail. In this work, we combine constant chemical potential simulations with a particle insertion method to model the growth of the ZIF-8 MOF at varying synthesis temperatures and concentrations of the reactants. Non-classical growth mechanisms triggered by oligomer attachments were detected, with a higher predominance in the most concentrated setups. The newly formed layers preserve the pore-like density profile of the seed crystal but contain defective sites characterized by the presence of 3, 5 and 7…
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Taxonomy
TopicsMetal-Organic Frameworks: Synthesis and Applications · X-ray Diffraction in Crystallography · Zeolite Catalysis and Synthesis
