Microscopic evidence of dominant excitonic instability in Ta2NiSe5
Seokjin Bae, Arjun Raghavan, Irena Feldman, Amit Kanigel, and Vidya Madhavan

TL;DR
This study provides microscopic evidence that Ta2NiSe5 is an excitonic insulator, with insulating behavior driven by electron-hole pair correlations rather than structural distortions, making it a promising platform for studying bosonic condensates.
Contribution
The paper presents direct microscopic evidence supporting the excitonic origin of the insulating phase in Ta2NiSe5, distinguishing it from structural effects and highlighting charge correlations.
Findings
Insulating gap persists at structural domain boundaries.
Gap suppressed at localized charge puddles.
In-gap state decay length matches exciton size estimates.
Abstract
An excitonic insulator (EI) is a charge-neutral bosonic condensate of spontaneously formed electron-hole pairs. Exotic quantum phenomena such as dissipationless charge neutral transport and huge potential for optoelectronic applications have led to an extensive search for intrinsic bulk materials that are EIs at ambient pressure without sophisticated device fabrication. The narrow gap semimetal Ta2NiSe5 has been proposed as a rare example of an intrinsic EI, but its ground state has remained controversial since the EI phase transition is accompanied by a structural distortion. Here, we use scanning tunneling microscopy and spectroscopy to present microscopic evidence that supports an excitonic origin of the insulating phase in Ta2NiSe5. First, we find that the insulating gap persists at structural domain boundaries where the bulk structural distortion is absent suggesting that the…
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Taxonomy
Topics2D Materials and Applications · Topological Materials and Phenomena · Organic and Molecular Conductors Research
