GaN mid-IR plasmonics: low-loss epsilon-near-zero modes

TL;DR

This paper investigates low-loss epsilon-near-zero plasmonic modes in heavily doped GaN thin films for mid-infrared applications, supported by experimental data and analysis.

Contribution

It provides the first comprehensive experimental and theoretical study of GaN's ENZ plasmonic properties in the mid-IR, demonstrating low optical losses and potential for photonic integration.

Findings

GaN exhibits low-loss ENZ behavior up to 3 μm.

Hybridization of surface plasmon and phonon polaritons observed.

Flat-dispersion high-energy mode indicates ENZ character.

Abstract

Epsilon-near-zero (ENZ) materials, defined by $ | Re({\epsilon}) | < 1$, enable unique light propagation characteristics, including confinement within sub-wavelength regions. To reduce losses in this regime, materials with both near-zero permittivity and $n<1$ refractive index, known as near-zero-index (NZI) materials, are desired. When both conditions are satisfied, the resulting region is classified as a low-loss ENZ medium combining strong light confinement with reduced optical losses. To achieve this behavior in the mid-IR, heavily doped semiconductors are required, and those compatible with current technologies are most desirable. This work provides the first in-depth study, supported by experimental demonstrations, of the plasmonic properties of highly doped GaN thin films on Si, exhibiting low optical losses and low-loss ENZ characteristics up to $3{\mu}m$. From the extracted optical parameters, the ENZ and NZI regions are determined and compared with the existing literature. As a result of the large polar character of nitrides, a hybridization of the surface plasmon and phonon polaritons is observed, accompanied by a flat-dispersion of the high-energy mode (pinned near the plasma frequency) indicative of its ENZ character. Establishing GaN as a viable platform for mid-IR ENZ-based plasmonics paves the way for integration into future infrared photonic technologies.