Extraordinary cation-replace-cation antisite defect predominate in Bi2SeO5

TL;DR

This study uses first-principles calculations to analyze defect properties in Bi2SeO5, revealing dominant cation-cation antisite defects and their impact on the material's electronic behavior, aiding device design.

Contribution

It provides a detailed theoretical analysis of defect chemistry in Bi2SeO5, highlighting the dominance of antisite defects and their influence on electronic properties under various conditions.

Findings

BiSe and SeBi are the dominant antisite defects.

Defect formation energies vary significantly across nonequivalent sites.

Bi2SeO5 exhibits p-type, intrinsic, or weak n-type behavior depending on growth conditions.

Abstract

As a newly identified single-crystalline van der Waals dielectric with a high dielectric constant, Bi2SeO5 plays a pivotal role in advancing 2D electronic devices. In this work, we systematically investigate the defect properties of Bi2SeO5 using first-principles calculations based on a hybrid functional. Although Bi2SeO5 is a chemically ternary compound, each constituent element occupies several crystallographically nonequivalent sites, rendering its defect chemistry highly complex. Due to the anomalous +4 cationic valence state of Se, the defect formation energies of same main group anion antisite defects (SeO and OSe) are prohibitively high, and their concentrations can therefore be neglected. In contrast, the extraordinary cation-cation antisite defects BiSe and SeBi emerge as the dominant defects. The pronounced variability in the formation energies of the six types of VO defects demonstrates that identical defect types located on nonequivalent atomic sites can exhibit markedly different properties. Under O-rich and Se/Bi-poor conditions, Bi2SeO5 shows relatively robust p-type behavior. Conversely, under O-poor and Se/Bi-rich conditions, or at intermediate O, Se, and Bi partial pressures, Bi2SeO5 behaves as an intrinsic semiconductor or displays very weak n-type conductivity due to strong donor-acceptor compensation. This study provides theoretical insights to guide the design and development of high-performance Bi2SeO5-based electronic devices.