Wafer-Scale Single-Crystalline Monolayer Graphene

TL;DR

This paper presents a scalable method to produce large-area, single-crystalline monolayer graphene free from multilayer domains by delaminating epitaxial graphene from silicon carbide, confirmed by quantum Hall effect observations.

Contribution

The authors demonstrate a novel one-step delamination process enabled by surface reconstruction of SiC, achieving high-quality, large-area monolayer graphene suitable for scalable applications.

Findings

Successful growth of near cm-sized single-crystalline graphene

Confirmation of monolayer quality via quantum Hall effect

Scalable process demonstrated on 4-inch wafers

Abstract

Producing large-area single-crystalline graphene is key to realizing its full potential in advanced applications, including twistronics. Yet, controlling graphene growth kinetics to avoid grain boundaries or multilayer growth remains challenging. Here, we demonstrate single-crystalline graphene free from multilayer domains via one-step delamination of epitaxial graphene from silicon carbide (SiC). This is enabled by a specific surface reconstruction of 4H-SiC(0001) achieved in our growth conditions. High crystalline quality is confirmed by the observation of the half-integer quantum Hall effect -- the hallmark of monolayer graphene -- in near cm-sized crystals. The scalability of our process, explored with 4''-wafers, represents an advance toward large-scale integration of high-performance graphene applications.