Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform

TL;DR

This paper demonstrates electrical spin state readout and control of silicon vacancy ensembles in a silicon carbide-on-insulator platform across a broad wavelength range, enabling scalable quantum device integration.

Contribution

It introduces a novel photoelectrical detection method for spin readout in SiCOI, extending operational wavelengths beyond the zero phonon line, with coherence times comparable to bulk SiC.

Findings

Successful electrical readout of spin states across 780-990 nm wavelengths.

Measured spin coherence time of approximately 7 microseconds in thin-film SiCOI.

Comparison shows similar coherence times between thin-film and bulk SiC.

Abstract

We report electrical spin state readout and coherent control of an ensemble ($\sim$540) of silicon vacancies ($\mathrm{V}_{\mathrm{Si}}^{-}$) in a silicon carbide-on-insulator (SiCOI) platform, with excitation wavelengths from 780 to 990 nm, demonstrating for the first time spin state readout well beyond the zero phonon line of the V2 $\mathrm{V}_{\mathrm{Si}}^{-}$. By implementing photoelectrical detection of magnetic resonance in thin-film SiCOI, we merge a scalable spin readout technique requiring no collection optics, together with a promising platform for future scalable and CMOS-compatible integrated photonics. Furthermore, we provide a comparison of optical and electrical readout between bulk silicon carbide (SiC) and thin-film SiCOI, revealing that our thin-film processing has a measured $T_2$ coherence time of $\approx 7 \mu$s , similar to that in the bulk SiC. These results extend the capabilities of SiCOI toward electronic and spin-based devices for scalable quantum technologies over a wide range of excitation wavelengths.