Deep-Cryogenic Modeling of 22-nm FDSOI MOSFETs based on BSIM-IMG

TL;DR

This paper develops a BSIM-IMG-based model for 22-nm FDSOI MOSFETs at deep cryogenic temperatures, incorporating mobility modifications and validated through simulations of a DAC.

Contribution

It introduces a comprehensive modeling approach for cryogenic MOSFETs using BSIM-IMG, including new mobility equations and validation on a practical circuit.

Findings

Close agreement between simulations and measurements for the DAC at cryogenic temperatures

Effective extraction of static and dynamic parameters from measurements

Model captures intersubband scattering effects in cryogenic conditions

Abstract

We present a modeling approach based on the BSIM-IMG compact model to capture the deep-cryogenic behavior of MOSFET devices in a 22-nm FDSOI technology. The modeling flow is based on DC measurements to extract static parameters including variability and RF measurements to extract dynamic parameters. Modifications to the mobility equations are introduced to enable the modeling of intersubband scattering effect. The extracted models are used to enable deep-cryogenic simulations of a digital-to-analog converter (DAC), showing close agreement with measurement results.