Sneak Path Current Modeling in Memristor Crossbar Arrays for Analog In-Memory Computing
Shah Zayed Riam, Zhenlin Pei, Kyle Mooney, Chenyun Pan, Na Gong, and Jinhui Wang

TL;DR
This paper introduces an analytical model to accurately estimate sneak path currents in memristor crossbar arrays, aiding design optimization for energy-efficient in-memory computing systems.
Contribution
It presents a closed-form analytical framework that captures key parameters affecting sneak path currents, validated with high accuracy and speed, facilitating design and real-time optimization.
Findings
Model achieves less than 10.9% error compared to SPICE simulations.
Model is up to 4784 times faster than full circuit simulations.
Sensitivity analysis reveals trade-offs in array scaling and design parameters.
Abstract
Memristor crossbar arrays have emerged as a key component for next-generation non-volatile memories, artificial neural networks, and analog in-memory computing (IMC) systems. By minimizing data transfer between the processor and memory, they offer substantial energy savings. However, a major design challenge in memristor crossbar arrays is the presence of sneak path currents, which degrade electrical performance, reduce noise margins, and limit reliable operations. This work presents a closed-form analytical framework based on 1.4nm technology for accurately estimating sneak path currents in memristor crossbar arrays. The proposed model captures the interdependence of key design parameters in memristor crossbar arrays, including array size, ON/OFF ratio of memristors, read voltage, and interconnect conditions, through mathematically derived relationships. It supports various practical…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Energy Harvesting in Wireless Networks
