Formation of Light-Emitting Defects in Ag-based Memristors

TL;DR

This paper investigates the formation and evolution of light-emitting defects in Ag-based memristors, combining electrical and optical measurements to understand emission mechanisms for neuromorphic applications.

Contribution

It provides new insights into defect formation and emission control in Ag-based memristors, advancing their integration into neuromorphic circuits.

Findings

Defects responsible for light emission form during device activation.

Electrical stimulation influences defect evolution and emission properties.

Insights enable better control of emission processes in memristors.

Abstract

Optical memristors are innovative devices that enable the integration of electro-optical functionalities - such as light modulation, multilevel optical memory, and nonvolatile reprogramming - into neuromorphic networks. Recently, their capabilities have expanded with the development of light-emitting memristors, which operate through various emission mechanisms. One notable process involves the electroluminescence of defects generated within the switching matrix during device activation. In this study, we explore the early-stage formation and evolution of the species responsible for light emission in Ag-based in-plane memristors. Our approach combines electrical stimulation with correlated optical electroluminescence and photoluminescence measurements. The findings provide valuable insights into controlling emission processes in memristors, paving the way for their integration as essential components in neuromorphic circuits.