Integrated emitters with CMOS-compatible tuning for large scale quantum SiN photonic circuits

TL;DR

This paper demonstrates the scalable integration of InGaAs quantum dots with CMOS-compatible tuning onto a low-loss SiN platform, enabling advanced quantum photonic circuits with high yield and tunability.

Contribution

It introduces a high-yield, CMOS-compatible method for integrating quantum emitters onto SiN photonic circuits, advancing scalable quantum photonics.

Findings

94.7% processing yield using micro-transfer printing

Noise suppression and near-blinking-free operation

Wavelength tunability via CMOS-level electrical biasing

Abstract

Next-generation scalable quantum photonic technologies operating at the single photon level rely on bringing together optimized quantum building blocks with minimal optical coupling losses. Achieving this necessitates the heterogeneous integration of different elements onto a single interposer chip. Integrated quantum emitters are key enablers for generating single photons, inducing quantum nonlinearities, and producing entanglement. In this work, we demonstrate the scalable integration of mature InGaAs quantum dots embedded in GaAs waveguides onto a low-loss SiN photonic platform, as evidenced by a high processing yield of 94.7% using a commercially available micro-transfer printing tool. These integrated emitters are embedded within a p-i-n heterostructure that allows for noise suppression, near-blinking-free operation and wavelength tunability upon CMOS-level electrical biasing. With this, we pave the way for scalable integration of diverse quantum photonic devices on a single chip.