Effect of FABr Over-Stoichiometry on the Morphology and Optoelectronic Properties of Wide-Bandgap FAPbBr_3 Films
G. Ammirati, F. Martelli, F. Toschi, S. Turchini, P. O'Keeffe, A. Paladini, F. Matteocci, J. Barichello, D. Di Girolamo, S. Piccirillo, A. Di Carlo, D. Catone

TL;DR
This study shows that adjusting FABr over-stoichiometry in FAPbBr_3 films improves defect passivation and optoelectronic performance, with optimal results at 5% excess FABr leading to higher efficiency and transparency.
Contribution
It demonstrates that controlled FABr over-stoichiometry enhances defect passivation and device performance in wide-bandgap FAPbBr_3 perovskite films.
Findings
Optimal 5% FABr excess yields highest efficiency (6.26%)
FABr over-stoichiometry reduces defect-related emissions
Increased FABr leads to smaller grain size and improved passivation
Abstract
In this study, we investigate the impact of formamidinium bromide (FABr) over-stoichiometry in the precursor solution on the optoelectronic properties and morphology of the resulting films of formamidinium lead bromide (FAPbBr_3). Optical characterization, including steady-state absorption, photoluminescence (PL), and femtosecond transient absorption spectroscopy, reveals a systematic blueshift in emission energy with increasing FABr content, attributed to the passivation of bromine vacancies and to the reduction of defect-assisted recombination. Power-dependent PL confirms this interpretation: the stoichiometric film exhibits a PL band due to donor-acceptor pair (DAP) recombination as identified by the typical excitation-dependent blueshift, whereas FABr-enriched samples show no evidence of DAP emission, indicating effective defect passivation. Additionally, morphological…
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Taxonomy
TopicsPerovskite Materials and Applications · Layered Double Hydroxides Synthesis and Applications · Inorganic Chemistry and Materials
