WSe2 p-MOSFETs with Nb-Doped WS2 Contacts Deposited using Atomic Layer Deposition

TL;DR

This paper demonstrates WSe2 p-MOSFETs with Nb-doped WS2 contacts fabricated via atomic layer deposition, showing promising low-resistance contacts for 2D transistors.

Contribution

It introduces a novel fabrication method for low-resistance Nb-doped WS2 contacts on WSe2 p-MOSFETs using atomic layer deposition and selective oxidation.

Findings

Achieved on-state current of 103 uA/um at VDS = -1 V

Device with 0.15 um source/drain spacing

Provides CMOS-compatible contact fabrication pathway

Abstract

WSe2 p-MOSFETs with Nb-doped WS2 contacts formed using atomic layer deposition are demonstrated. The devices are fabricated using a technique that aligns the contact metallization with the Nb-doped WS2 contacts using a selective oxidation process. Devices with source/drain spacing of 0.15 um have on-state current of 103 uA/um at VDS = -1 V at a channel carrier concentration of ~ 7.5 x 1012 cm-2. The results provide a promising CMOS-compatible pathway to create low-resistance contacts to 2D-channel transistors.