Radiation tolerance test and damage of single-crystal CVD Diamond sensor under high fluence particles

TL;DR

This study investigates the radiation damage thresholds and mechanisms in single-crystal CVD diamond sensors under high fluence neutron and proton irradiation, demonstrating their stability and developing improved models for detector response in extreme environments.

Contribution

The paper provides new insights into defect formation, damage constants, and saturation effects in diamond sensors, along with an advanced simulation framework for predicting radiation damage effects.

Findings

Diamond sensors remain stable up to high neutron fluences.

Identified dominant point defects and macroscopic damage features.

Developed an enhanced carrier-drift degradation model that aligns with experimental data.

Abstract

Single-crystal chemical vapor deposition (CVD) diamond is a promising material for radiation detectors operating in extreme environments, owing to its outstanding radiation hardness. As nuclear and high-energy physics applications demand particle detectors that withstand higher radiation fluences, understanding the damage thresholds and degradation mechanisms of diamond-based detectors is essential. In this study, single-crystal CVD diamond sensors were exposed to fast neutron irradiation at fluences up to $3.3\times10^{17}$ ${n/cm^2}$. Modules exhibited stable output confirming potential for application in future high-dose radiation environments. The dominant defects were identified as point defects including <100> self interstitials, vacancies, and lattice disorder. Macroscopic defects including nanocavities and cracks were observed with areal densities approaching $10^7$ $cm^{-2}$. The impact of 100 MeV proton irradiation on diamond detector response was quantified by extracting a damage constant of $k^{100 MeV}_{proton}=(1.452\pm0.006)\times10^{-18}cm^2/(p\cdot\mu m)$ from a linear carrier drift degradation model. The mean free path of carriers was found to exhibit saturation behavior beyond a fluence of $4\times10^{16}$ ${p/cm^2}$ under 100 MeV proton irradiation. Monte Carlo together with molecular dynamics simulations were performed to assess irradiation induced defect and its influence on carrier transport. By considering saturation effects and defect-interaction corrections, we develop an enhanced carrier-drift degradation model that accurately captures detector response under high-dose irradiation. Furthermore, the simulation framework was applied to evaluate damage induced by protons and pions on diamond at various energies, yielding results that show better agreement with experimental data than conventional NIEL based estimates.