Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy

TL;DR

This paper reports the growth of InAs/InP quantum dots via MOVPE using droplet epitaxy, achieving broadband single-photon emission in the telecommunication band with high purity and short lifetime, advancing quantum communication technologies.

Contribution

It introduces a novel droplet-epitaxy method for InAs/InP quantum dots grown by MOVPE, enabling broadband single-photon emission in the telecom band with promising optical properties.

Findings

Achieved single-photon emission with g(2)(0) = 0.16

Emission wavelength range of 1200-1600 nm

Radiative lifetime as short as 1.5 ns

Abstract

The development of quantum materials for single-photon emission is crucial for the advancement of quantum information technology. Although significant advancement has been witnessed in recent years for single photon sources in near infrared band ({\lambda}~700-1000 nm), several challenges have yet to be addressed for ideal single photon emission at the telecommunication band. In this study, we present a droplet-epitaxy strategy for O-band to C-band single-photon source based semiconductor quantum dots (QDs) using metal-organic vapor-phase epitaxy (MOVPE). Via investigating the growth conditions of the epitaxial process, we have successfully synthesized InAs/InP QDs with narrow emission lines spanning a broad spectral range of {\lambda}~1200-1600 nm. The morphological and optical properties of the samples were characterized using atomic force microscopy and micro photoluminescence spectroscopy. The recorded single-photon purity of a plain QD structure reaches (g(2)(0) = 0.16), with a radiative recombination lifetime as short as 1.5 ns. This work provides a crucial platform for future research on integrated microcavity enhancement techniques and coupled QDs with other quantum photonics in the telecom bands, offering significant prospects for quantum network applications.