Fabrication of A Dual Gated Mirror Symmetric Twisted Trilayer Graphene Device to Study Superconductivity

TL;DR

This paper presents a fabrication method for a dual-gated, mirror-symmetric twisted trilayer graphene device, enabling detailed study of superconductivity in moire materials with tunable electronic properties.

Contribution

It introduces a novel fabrication technique for a dual-gated twisted trilayer graphene device that enhances tunability for superconductivity research.

Findings

Device allows in situ tuning of electronic properties.

Facilitates exploration of correlated states like superconductivity.

Provides a scalable fabrication approach.

Abstract

Though research on graphene by itself has waned, the interest in moire materials, materials made with stacked layers of graphene with a rotational twist between the layers, has exploded in popularity. These layered devices show a key feature, flat bands. Flat bands localize electrons, which in turn leads to the expression of correlated states such as Mott insulators, superconductivity, and more. A key property of these devices is that their 2D nature allows us to tune them in situ, effectively allowing us to change the device's electronic properties. This powerful ability greatly reduces the time and money required to study superconductivity. The superconductivity in these systems seems to be similar to high-temperature superconductors such as cuprates, giving us a path towards studying high-temperature superconductivity. The fabrication of these devices is nontrivial, and thus we detail one general way to create these layered devices to give maximal tunability.