High-Fidelity Raman Spin-Dependent Kicks in the Presence of Micromotion

TL;DR

This paper introduces a method for high-fidelity spin-dependent kicks in trapped ions using Raman pulses, effectively mitigating micromotion effects to enable advanced quantum gate operations.

Contribution

It develops a general approach to maintain SDK performance in the presence of micromotion by optimizing RF phase and frequency.

Findings

SDK infidelity as low as 10^{-9} without micromotion

SDK infidelity below 10^{-5} with micromotion

Foundation for sub-trap-period high-fidelity two-qubit gates

Abstract

We propose high-fidelity single-qubit spin-dependent kicks (SDKs) for trapped ions using nanosecond Raman pulses via amplitude modulation of a continuous-wave laser with a tunable beat frequency. We develop a general method for maintaining SDK performance in the presence of micromotion by identifying optimal choices of the RF phase and frequency that suppress unwanted backward kicks. The proposed scheme enables SDK infidelities as low as $10^{-9}$ in the absence of micromotion, and below $10^{-5}$ with micromotion. This study lays the foundation for the realization of sub-trap-period and high-fidelity two-qubit gates based on SDKs.