K-shell ionization and characteristic x-ray radiation by high-energy electrons and positrons in oriented silicon crystals

TL;DR

This study uses computer simulations to analyze how high-energy electrons and positrons cause K-shell ionization and characteristic x-ray radiation in oriented silicon crystals, revealing complex behaviors influenced by crystal orientation and particle energy.

Contribution

A detailed simulation method for studying K-shell ionization and x-ray radiation in oriented silicon crystals at high energies is introduced and analyzed.

Findings

Angular distribution of CXR evolves non-monotonically with incident angle and energy.

Dechanneling significantly impacts CXR produced by electrons.

The evolution of CXR depends on crystal orientation and particle energy.

Abstract

K-shell ionization and characteristic x-ray radiation (CXR) by high-energy electrons and positrons in oriented silicon crystals are studied using computer simulation. A method for this simulation has been developed and is described in detail. The evolution of the angular distribution of CXR from the upstream surface of the crystal with changes in the angle between the incident particle momentum and the crystal <100> axis or (100) plane, as well as with changes in particle energy over a wide range (1-1000 GeV), is investigated. It is shown that in most cases this evolution is non-monotonic. The physical mechanisms underlying this behavior are discussed. In particular, the impact of the dechanneling process on CXR produced by electrons is analyzed.